Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof
US10978640B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 8, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Nov 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
Abstract
Methods for producing and integrating single-walled carbon nanotubes (SWCNT) into existing TFT backplane manufacturing lines are provided. In contrast to LTPS and oxide TFT backplanes, SWCNT TFT backplanes exhibit either equivalent or better figures of merit such as high field emission mobility, low temperature fabrication, good stability, uniformity, scalability, flexibility, transparency, mechanical deformability, low voltage and low power, bendability and low cost. Methods and processes for integrating SWCNTs technologies into existing TFT backplane manufacturing lines, pilot test and mass production can start without additional capex needs are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.