CVD apparatus with multi-zone thickness control
US10982327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2019 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Sep 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a method of chemical vapor deposition (CVD). In some embodiments, a process gas is applied into a vacuum chamber. The process gas is guided downstream the vacuum chamber through a shower head arranged under the gas import, where the process gas is redirected to be laterally unevenly distributed under the shower head. A density of the process gas increases from a center region to a peripheral region of the vacuum chamber. The process gas is then deposited onto a first substrate to form a precursor material with an uneven thickness profile as a result of uneven distribution of the process gas. The shower head has multiple control zones each having a plurality of holes disposed through the shower head.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.