Semiconductor device with bioFET and biometric sensors
US10984211B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2019 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Oct 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N39/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.