Semiconductor storage device
US10984858B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2020 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Feb 10, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device includes: a voltage generation circuit configured to generate a read voltage to be supplied to a selected word line to which a read-target memory cell transistor is connected and a read-pass voltage to be supplied to an adjacent word line; a word line driver configured to, when the read voltage transitions, apply the read voltage to the selected word line with a first kick voltage amount and apply the read-pass voltage to the adjacent word line with a second kick voltage amount; and a control circuit configured to set each of the first kick voltage amount and the second kick voltage amount to a voltage corresponding to an amount of the transition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.