Thin film transistor substrate with intermediate insulating layer and display using the same
US10985196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2015 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Jun 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
Abstract
Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.