Semiconductor device and method of forming the same
US10985255B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2019 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Jul 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate trench crossing an active region, and a gate structure in the gate trench. The gate structure includes a gate dielectric layer disposed on an inner wall of the gate trench, a gate electrode disposed on the gate electric layer and partially filling the gate trench, a gate capping insulating layer disposed on the gate electrode, and a gap-fill insulating layer disposed in the gate trench and disposed on the gate capping insulating layer. The gate capping insulating layer includes a material formed by oxidizing a portion of the gate electrode, nitriding the portion of the gate electrode, or oxidizing and nitriding the portion of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.