Radiation-hard high-speed photodiode device

US10985291B2 · kind B2 · utility

Assignee

• AMS INTERNATIONAL AG · CH

Inventors

• Gerald Meinhardt · Graz, AT
• Ewald Wachmann · Kainbach, AT
• Martin Sagmeister · Passau, DE
• Jens Hofrichter · Eindhoven, NL

Key dates

• Filing date: Nov 28, 2017
• Grant date: Apr 20, 2021
• Expiry date: Nov 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/206

Abstract

The photodiode device comprises a substrate (1) of semiconductor material with a main surface (10), a plurality of doped wells (3) of a first type of conductivity, which are spaced apart at the main surface (10), and a guard ring (7) comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring (7) surrounds an area of the main surface (10) including the plurality of doped wells (3) without dividing this area. Conductor tracks (4) are electrically connected with the doped wells (3), which are thus interconnected, and further conductor tracks (5) are electrically connected with a region of the second type of conductivity. A doped surface region (2) of the second type of conductivity is present at the main surface (10) and covers the entire area between the guard ring (7) and the doped wells (3).