Patent · US Active

Contact structures for light emitting diode chips

US10985294B2 · kind B2 · utility

4Cited by
31References
28Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 19, 2019
Grant dateApr 20, 2021
Priority date
Expiry dateMar 19, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857

Abstract

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.