Light-emitting device

US10985295B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Chao-Hsing Chen · Tainan, TW
• Jia-Kuen Wang · Hsinchu, TW
• Tzu-Yao Tseng · Hsinchu, TW
• Bo-Jiun Hu · Beijing, CN
• Tsung-Hsun Chiang · Hsinchu, TW
• Wen-Hung Chuang · Hsinchu, TW
• Kuan-Yi Lee · Taipei, TW
• Yu-Ling Lin · Hsinchu, TW
• Chien-Fu Shen · Hsinchu, TW
• Tsun-Kai Ko · Tainan, TW

Key dates

• Filing date: Jun 3, 2020
• Grant date: Apr 20, 2021
• Expiry date: Jun 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.