MEMS device with reduced electric charge, cavity volume and stiction
US10988372B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 22, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Mar 15, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/036
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.