Chemical vapor transport growth of two-dimensional transition-metal dichalcogenides
US10988842B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2018 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Feb 13, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.