Photosensitive resin composition and etching process
US10990010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2016 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Mar 22, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is a photosensitive resin composition to be used in an etching process in which an etching treatment is conducted with an etching solution containing hydrofluoric acid or ammonium fluoride. The photosensitive resin composition comprises at least (A) an acid-modified epoxy acrylate, (B) a photopolymerization initiator, (C) a blocked isocyanate compound, and (D) a filler. The etching process involves forming a photosensitive resin layer comprising said photosensitive resin composition, on at least one surface of a substrate; exposing and then developing the photosensitive resin layer; baking the photosensitive layer; and conducting an etching treatment with an etching solution containing hydrofluoric acid or ammonium fluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.