Detector for detecting incident electron beam
US10991541B2 · kind B2 · utility
4Cited by
31References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Dec 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2446
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A detector, comprising: a semiconductor substrate which detects an incident electron beam; a supporting substrate which is thicker than the semiconductor substrate and which supports the semiconductor substrate; and an insulating film layer which is provided between the semiconductor substrate and the supporting substrate, wherein at least one charge suppression film which is not electrically connected to the semiconductor substrate is formed inside the insulating film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.