Forming a planar surface of a III-nitride material
US10991578B2 · kind B2 · utility
1Cited by
2References
11Claims
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Key dates
| Filing date | Oct 5, 2017 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Oct 5, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a nanostructure, comprising a planar layer (1020) of a Ill-nitride semiconductor crystal, which layer includes an array of epitaxially grown nanowire structures (1010), and semiconductor material (1016) which is redistributed from said nanowire structures in a reformation step after epitaxial growth, arranged to fill out a spacing between the nanowire structures, wherein the array of nanowire structures and the semiconductor material form a coherent layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.