3D image sensor
US10991748B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2018 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Dec 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.