Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
US10991822B2 · kind B2 · utility
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Key dates
| Filing date | Feb 22, 2018 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Feb 22, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an SiC-MOSFET with a built-in Schottky diode, a bipolar current may be passed in a second well region formed at a terminal part to reduce a breakdown voltage. In the SiC-MOSFET with the built-in Schottky diode, a conductive layer in Schottky connection with the second well region is provided on the second well region in the terminal part, and the conductive layer is electrically connected with a source electrode of the MOSFET. A conductive layer contact hole is provided for connecting only the conductive layer and the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.