Hydrogen diffusion barrier for hybrid semiconductor growth
US10991835B2 · kind B2 · utility
1Cited by
14References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Aug 8, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.