Photoelectric conversion element
US10991842B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2018 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Oct 22, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To reduce a dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material. On an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 μm or more and less than 200 μm per square micrometer of the area of the binarized image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.