Etchant composition and method of fabricating integrated circuit device using the same
US10995269B2 · kind B2 · utility
1Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Nov 17, 2017 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Nov 17, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/06
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I):A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.