Electro-optic modulator
US10996539B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 13, 2019 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Jun 13, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a SIS-type electro-optic modulator capable of realizing highly efficient optical coupling with a rib-type Si waveguide, improving modulation efficiency, realizing reduction of electric capacity and lead-out resistance in stacked semiconductor layers. The modulator includes a SIS junction constituted by first and second semiconductor layers having different type of conductivity and a dielectric layer interposed therebetween, wherein an electrical signal from electrodes coupled to the first and second semiconductor layers causes free carriers accumulate, deplete or invert on both sides of the dielectric layer, thereby modulating a free carrier concentration felt by an optical signal electric filed, light having a polarization component orthogonal to the width direction of the SIS junction is incident on the dielectric layer, and the width of the SIS junction is λ/neff or less (λ is the wavelength of the incident light and neff is an effective refractive index of the modulator to the incident light).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.