Semiconductor device with insulating layers forming a bonding plane between first and second circuit components, method of manufacturing the same, and electronic device
US10998370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2019 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Sep 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80896
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.