Laterally diffused metal oxide semiconductor device and method for manufacturing the same
US10998416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2019 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | May 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/671
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laterally diffused metal oxide semiconductor device can include: a well region having a second doping type; a reduced surface field effect layer of a first doping type formed by an implantation process in a predetermined region of the well region, where a length of the reduced surface field effect layer is less than a length of the well region; a body region of the first doping type extending from a top surface of the well region into the well region; a drain portion of the second doping type extending from the top surface of the well region into the well region; and an insulating structure located between the body region and the drain portion, at least a portion of the insulating structure is located on the top surface of the well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.