Group-IV solar cell structure using group-IV or III-V heterostructures

US10998462B2 · kind B2 · utility

Assignee

• The Boeing Company · US

Inventors

• Richard R. King · Thousand Oaks, US
• Christopher M. Fetzer · Valencia, US
• Nasser H. Karam · Tustin, US

Key dates

• Filing date: Feb 28, 2018
• Grant date: May 4, 2021
• Expiry date: Feb 28, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.