Patent · US Active

Magnetic element

US10998490B2 · kind B2 · utility

0Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 5, 2018
Grant dateMay 4, 2021
Priority date
Expiry dateApr 5, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/85
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A magnetic element includes a first magnetic layer and a first nonmagnetic layer. An angle θ0 between a first direction and the magnetization direction of the first magnetic layer satisfies 0°<θ0<90° or 90°<θ0<180° in a state in which neither a voltage nor a magnetic field is substantially applied to the first magnetic layer; and the first direction is from the first nonmagnetic layer toward the first magnetic layer. A resistance·area of the first nonmagnetic layer is 10 Ωμm2 or more.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.