Film bulk acoustic resonator fabrication method with frequency trimming based on electric measurements prior to cavity etch
US10998877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2020 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Aug 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0442
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating acoustic resonators are disclosed. A back surface of a single-crystal piezoelectric plate is bonded to a surface of a substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern including a plurality of interdigital transducers (IDTs) of a plurality of resonators. A dielectric passivation/tuning layer is formed over the conductor pattern and the front surface of the piezoelectric plate. Electrical measurements are made on at least some of the plurality of resonators. Material is selectively removed from the dielectric passivation/tuning layer in accordance with the electrical measurements. After removing material from the dielectric passivation/tuning layer, cavities are formed in the substrate such that interleaved fingers of each IDT are disposed on a respective diaphragm spanning a respective cavity
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.