In-plane sensor misalignment measuring device using capacitive sensing
US11002527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2020 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Jan 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.