Patent · US Active

Magnetoresistance element with increased operational range

US11002807B2 · kind B2 · utility

5Cited by
62References
47Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 2, 2020
Grant dateMay 11, 2021
Priority date
Expiry dateMar 2, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/098
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magnetoresistance element deposited upon a substrate includes a first stack portion having opposing first and second surfaces and including a first plurality of layers. The first stack portion has a first substantially linear response corresponding to an applied magnetic field over a first magnetic field strength range. The magnetoresistance element also includes a second stack portion having opposing first and second surfaces and including a second plurality of layers. The first surface of the second stack portion is disposed over the second surface of the first stack portion and the second stack portion has a second substantially linear response that is different than the first substantially linear response. The second substantially linear response corresponds to the applied magnetic field over a second magnetic field strength range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.