Thin film transistor substrate and display device using the same
US11003039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2020 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Jun 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A display device includes: a substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer and a drain electrode electrically connected to the first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer and a gate electrode corresponding to the second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer, wherein the drain electrode of the first transistor is electrically connected to the gate electrode of the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.