Switching resistor and method of making such a device
US11004506B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 29, 2018 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Mar 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switching resistor has a low resistance state and a high resistance state. The switching resistor comprises a dielectric layer disposed between a first electrode and a second electrode. The switching resistor further comprises a textured boundary surface between the first electrode and the dielectric layer. The textured boundary surface promotes the formation of a conductive pathway in the dielectric layer between the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.