Ion source device
US11004649B2 · kind B2 · utility
0Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2018 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Feb 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides an electron-impact ion source device having high brightness as compared to known Nier-type ion sources, while providing similar advantages in terms of flexibility of the generated ion species, for example. The ionization chamber of the device operates at high pressures and provides for a large number of interactions between the electron beam and the gas molecules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.