Patent · US Active

Semiconductor structure

US11004811B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 25, 2020
Grant dateMay 11, 2021
Priority date
Expiry dateAug 25, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor structure includes a transceiver, a molding surrounding the transceiver, and a RDL disposed over the transceiver. The RDL includes an antenna and a dielectric layer. The antenna is disposed over and electrically connected to the transceiver. The dielectric layer surrounds the antenna. The antenna includes an elongated portion and a via portion. The elongated portion extends over the molding, and the via portion is electrically connected to the transceiver.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.