Thin film transistor, method for fabricating the same, array substrate, and display panel
US11004874B2 · kind B2 · utility
2Cited by
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18Claims
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Key dates
| Filing date | Apr 19, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Aug 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The disclosure discloses a thin film transistor, a method for fabricating the same, an array substrate, and a display panel. The thin film transistor includes: a first conductive layer on a base substrate, a first insulation layer on a side of the first conductive layer facing away from the base substrate, and a second conductive layer on a side of the first insulation layer facing away from the first conductive layer, wherein an active layer is arranged on a side of the first insulation layer facing the first conductive layer, and/or a side thereof facing the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.