Global shutter image sensor
US11004881B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Mar 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8033
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Examples of image sensors are provided. In one example, a pixel cell comprises a first semiconductor die, a sampling capacitor, and a second semiconductor die which may include the sampling capacitor. The first semiconductor die includes a photodiode and a charge sensing device. The second semiconductor die forms a stack with the first semiconductor die, the second semiconductor die including an interface circuit coupled with the photodiode, the charge sensing device, and the sampling capacitor. The interface circuit is configured to: enable the photodiode to accumulate charge responsive to incident light within a integration period; transfer the charge from the photodiode to the charge sensing device; perform, using the sampling capacitor, a sample-and-hold operation to convert the charge in the charge sensing device into a voltage; and generate a digital output based on the voltage to represent an intensity of the incident light received by the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.