Photoelectric diodes including photoelectric conversion layer and compensation later, and organic sensors and electronic devices including same
US11004909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Aug 9, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.