Manufacturing of a semiconductor photosensitive device
US11005002B2 · kind B2 · utility
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1References
14Claims
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Key dates
| Filing date | Jul 7, 2020 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Jul 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/122
Abstract
The present disclosure relates to a method of manufacturing a semiconductor device, including the successive steps of: a) forming doped germanium on a germanium layer covering a first support; b) covering said doped germanium with a second support; and c) removing the first support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.