Patent · US Active

Light source

US11005017B2 · kind B2 · utility

1Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 26, 2015
Grant dateMay 11, 2021
Priority date
Expiry dateSep 25, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K50/856

Abstract

There is proposed a light source comprising: a semiconductor diode structure adapted to generate light; and an optical enhancement section above the semiconductor diode structure and adapted to output light from the semiconductor diode structure. A partially-reflective layer covers at least a portion of the top of the optical enhancement section and is adapted to reflect a portion of the output light towards the optical enhancement section. The partially-reflective layer has a light transmittance characteristic that varies laterally.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.