Correlated electron material (CEM) device
US11005039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2020 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Jan 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A correlated electron material device is described to comprise a conductive substrate and a layer of a correlated electron material disposed over the conductive substrate.The layer of correlated electron material may comprise a metal rich transition or other metal compound, and at least a portion of anion vacancies within the metal rich transition or other metal compound are occupied by an electron back-donating extrinsic ligand for the metal rich transition or other metal compound. Under certain conditions, the electron back-donating extrinsic ligand occupying anion vacancies may be activated so as to impart particular switching characteristics in the correlated electron material device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.