Patent · US Active

CuO/Se composite film

US11008648B2 · kind B2 · utility

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11Claims

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Assignee

SHAANXI NORMAL UNIVERSITY · CN

Inventors

Fei Gao · Lo Wu, CN
Rongrong GAO · Beijing, CN
Hao Liu · Baltimore, US
Shengzhong Liu · Woodridge, US

Key dates

Filing date	Dec 28, 2019
Grant date	May 18, 2021
Priority date	—
Expiry date	Jan 16, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02631
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed is a CuO/Se composite film, in which Se with low melting point (221° C.) and strong photosensitivity is introduced into CuO, providing the film with fewer defects and excellent optical, electrical and photoelectric properties. In the preparation method of the invention, Se is introduced into CuO and melted by low-temperature annealing, and then the molten Se can infiltrate CuO to eliminate or reduce defects in the CuO film such as voids and dangling bonds, thereby improving optical, electrical and photoelectric properties of the film and overcoming the shortcomings that CuO has poor crystallinity, high melting point and is decomposed at a high temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.