Patent · US Active

Superconducting nanowire single photon detector and method of fabrication thereof

US11009387B2 · kind B2 · utility

37Cited by
62References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 15, 2020
Grant dateMay 18, 2021
Priority date
Expiry dateApr 15, 2040

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E40/60
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.