Patent · US Active

Semiconductor circuits, devices and methods

US11009529B2 · kind B2 · utility

0Cited by

11References

15Claims

0Family size

Assignee

X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

Klaus Heinrich · Nussbaumen, CH
Hartmut Liebing · Erfurt, DE
Andreas Roth · Gunzenhausen, DE
Stefan Eisenbrandt · Erfurt, DE
Andreas Ott · Erfurt, DE
Bruno BOURY · Tessenderlo, BE

Key dates

Filing date	Sep 26, 2017
Grant date	May 18, 2021
Priority date	—
Expiry date	Apr 4, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/111
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to the Wheatstone bridge and the device comprises a number of shielding structures to electrically isolate the high-voltage domain from the low-voltage domain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.