Electron multiplier having resistance value variation suppression and stablization
US11011358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2018 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Apr 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J43/246
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer formed of an insulating material includes a metal layer in which a plurality of metal particles formed of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween, the metal layer having a thickness set to 5 to 40 angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.