Hybrid template area selective epitaxy (HTASE)
US11011375B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 14, 2019 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Nov 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hybrid template assisted selective epitaxy (HTASE) process is described comprising the steps of: depositing a template oxide layer on top of a silicon fin; opening a via in a selected portion of the template oxide to expose a portion of the encapsulated silicon fin and subsequently growing a nitride superconductor layer on top of the exposed silicon fin thereby forming a hybrid encapsulation of the silicon fin; performing a back-etch of the silicon fin to remove a portion (e.g., 5 nm-20 um) of the silicon fin; growing a layer formed from a group III/group V compound within an area where the silicon fin was removed via the back-etch; and if needed, removing the template oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.