Patterning platinum by alloying and etching platinum alloy

US11011381B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Sebastian Meier · Munich, DE
• Helmut Rinck · Moosburg an der Isar, DE

Key dates

• Filing date: Jul 26, 2019
• Grant date: May 18, 2021
• Expiry date: Jul 26, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32139
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.