Method and apparatus for determining width-to-length ratio of channel region of thin film transistor
US11011437B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 26, 2019 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Jun 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6756
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.