Silicon carbide semiconductor device
US11011631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2018 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Apr 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
Abstract
A silicon carbide substrate has at least one of a first structure and a second structure. The first structure is such that a first impurity region is in contact with a second impurity region, a third impurity region is separated from a fourth impurity region by a second drift region, and the second impurity region has a width greater than a width of the fourth impurity region in a direction parallel to a first main surface. The second structure is such that the first impurity region is separated from the second impurity region by a first drift region, the third impurity region is in contact with the fourth impurity region, and the fourth impurity region has a width greater than a width of the second impurity region in the direction parallel to the first main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.