Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device

US11011674B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Jingfeng Bi · Tianjin, CN
• Chaoyu WU · Xiamen, CN
• Duxiang WANG · Xiamen, CN
• Senlin Li · 红钢城街道, CN
• Chun-Yi Wu · New Taipei, TW
• Shih-Yi Lien · Yangmei District, TW

Key dates

• Filing date: Dec 12, 2019
• Grant date: May 18, 2021
• Expiry date: Dec 12, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.