Switching device formed from correlated electron material
US11011701B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2019 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Jan 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.