Patent · US Active

Switching device formed from correlated electron material

US11011701B2 · kind B2 · utility

0Cited by
8References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 28, 2019
Grant dateMay 18, 2021
Priority date
Expiry dateJan 28, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/8833

Abstract

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.