Patent · US Active

Semiconductor nanocrystal particles, production methods thereof, and devices including the same

US11011720B2 · kind B2 · utility

2Cited by
4References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 11, 2019
Grant dateMay 18, 2021
Priority date
Expiry dateMar 11, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K2102/351
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.