Ferroelectric memories
US11017830B1 · kind B1 · utility
7Cited by
6References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 19, 2020 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Jun 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory is provided. The ferroelectric memory includes a first electrode layer having a dominant crystallographic orientation of (110) or (220), a second electrode layer opposite the first electrode layer, wherein the second electrode layer has a dominant crystallographic orientation of (110) or (220), and a ferroelectric layer disposed between the first electrode layer and the second electrode layer, wherein the ferroelectric layer has a dominant crystallographic orientation of (111).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.