RF power amplifier
US11017983B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 13, 2019 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | May 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/6875
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, an RF power amplifier includes a first transistor and a second transistor in parallel, wherein a gate of the first transistor and a gate of the second transistor are configured to be driven by an RF source. A third transistor comprising a drain is operably coupled to both a source of the first transistor and a source of the second transistor. A control circuit is operably coupled to a gate of the third transistor and configured to alter a gate-to-source voltage of the third transistor, thereby altering a drain current of each of the first transistor and the second transistor, thereby altering an output power of the RF power amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.